DUAL ENHANCEMENT MODE (N –CHANNEL/ P-CHANNEL)
DESCRIPTION
The UTC UTT10NP06 incorporates an N-channel MOSFET and a P-channel MOSFET，it uses UTC’s advanced technology to provide customers a minimum on-state resistance, high switching
speed, low gate charge and cost effectiveness.
The UTC UTT10NP06 is universally applied in low voltage applications.
FEATURES
* RDS(on) = 55mΩ @VGS = 10V, ID=4A
RDS(on) =65mΩ @VGS = 4.5V, ID=2A
* RDS(on) =100mΩ @VGS =-10V, ID=-3A
RDS(on) =120mΩ @VGS = -4.5V, ID=-2A
* High switching speed
* Low gate charge (N:Typ.=9nC,P:Typ.=12nC) |
