18A, 650V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 18N65 uses UTC’s advanced proprietary, planar stripe, DMOS technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
FEATURES
* RDS(ON) ≤ 0.5Ω @VGS = 10 V
* Ultra Low Gate Charge ( Typical 50nC )
* Low Reverse Transfer Capacitance ( CRSS = Typical 23pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness |
