DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL)
DESCRIPTION
The UTC UD4606Z is a dual enhancement mode Power
MOSFET using UTC perfect trench technology to provide customers
with advanced RDS(ON) and low gate charge. This device has ESD
protection function.
These complementary MOSFETs can be used to form a level
shifted high side switch and for other applications.
FEATURES
* N-Channel: 30V/6.9A
RDS(ON)=22.5mΩ (TYP.) (VGS=10V)
RDS(ON)=34.5mΩ ((TYP.) (VGS=4.5V)
*P-Channel: -30V/-6A
RDS(ON)=28mΩ(TYP.) (VGS=-10V )
RDS(ON)=44mΩ(TYP.) (VGS=-4.5V)
* Reliable and rugged
* ESD protection |
