30V, 108A N-CHANNEL POWER MOSFET
DESCRIPTION
As advanced N-channel level power MOSFET, the UTT108N03 is produced using UTC’s advanced trench technology, which has been specially tailored to minimize the on-resistance and maintain
low gate charge for superior switching performance.
FEATURES
* RDS(ON) = 6.0mΩ @VGS = 10V
* Low Capacitance
* Optimized Gate Charge
* Fast Switching Capability
* Avalanche Energy Specified |
