12A, 650V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 12N65 are N-Channel enhancement mode power
field effect transistors (MOSFET) which are produced by using
UTC’s proprietary, planar stripe and DMOS technology.
These devices are suited for high efficiency switch mode
power supply. To minimize on-state resistance, provide superior
switching performance and withst and high energy pulse in the
avalanche and commutation mode, the advanced technology has
been especially tailored.
FEATURES
* RDS(ON) = 0.85Ω @VGS = 10 V
* Ultra low gate charge ( typical 42 nC )
* Low reverse transfer capacitance ( CRSS = typical 25 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness |
