Press Center
 
Home About us Products Support Quality & Certification Career Contact us
• Power Management
    Linear Regulators
    Low Dropout Linear Regulators
    DDR Termination Regulators
    Shunt Reference Regulators
    Step Down Switching Regulators
    Switching Regulator
    Step-Up DC-DC Converter
    PWM Controller
    White LED Driver
    Supervisory Circuit
    Voltage Detection and System R
    USB Power Switch
    Power Factor Control
    Li-Battery Protection or Charg
    FET Bias Controllers
    Combo IC
    Inverting DC-DC Converter
• Amplifier / Comparator
    Audio Amplifiers
    Operational Amplifier
    Voltage Comparator
• Analog Switches
    Video Signal Switch
    Analog Multiplexers, Demultipl
• Hall ICs
• Special Application ICs
    Motor Controller IC
    Interface and Driver Circuit
    Telecommunication Circuit
    Melody IC
    Alarm /Sound Generator IC
    Remote Controller IC
    Television Circuit
    Leakage Current Detector
    Automotive IC
    A-D or D-A Converters
    Miscellaneous
    Radio and Cassette Recorder Ci
    Timer
    Mouse&Keyboard Controller
    Transient Voltage Suppressors
    Sense Monitor
    Video Filter
    ZCB snubber
• Logic
• TRANSISTORs
• MOSFETs
    JFET
    Power Mosfet
• TRIACs
• SCRs
• DIODEs
 
Home >
10N65 Datasheet
 
10A , 650V N-CHANNEL POWER MOSFET
 
 

 
DESCRIPTION
 
The UTC 10N65 is a high voltage and high current power MOSFET,
designed to have better characteristics, such as fast switching time, low
gate charge, low on-state resistance and a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
 
 
FEATURES
 
 
* RDS(ON) =0.86 Ω@VGS =10V
* Low gate charge ( typical 44 nC)
* Low Crss ( typical 18 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
About us  |  Products  |  Contact us
Copyright 2011 UTC All received