N CHANNEL SILICON
MOSFET GENERAL-PURPOSE
SWITCHING DEVICE
APPLICATIONS
DESCRIPTION
The 3LN01M uses UTC advanced technology to provide
excellent RDS(ON), low gate charge and operation with low gate
voltages. This device’s general purpose is for switching device
applications.
FEATURES
* RDS(ON) = 3.7 Ω @VGS = 4 V
* Ultra low gate charge ( typical 1.58 nC )
* Low reverse transfer capacitance ( CRSS = typical 2.3 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness |
