N-CHANNEL ENHANCEMENT MODE
DESCRIPTION
The UT4446 uses UTC’s advanced trench technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages. This device is suit able for use as a load switch or in PWM applications.
FEATURES
* RDS(ON)< 8.5mΩ @VGS=10V
* RDS(ON)< 14.5m Ω @VGS=4.5V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified |
