N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DESCRIPTION
The UT4422 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
FEATURES
* RDS(ON) = 15mΩ @VGS = 10 V
* Low Capacitance
* Low Gate Charge
* Fast Switching Capability
* Avalanche Energy Specified |
