N CHANNEL SILICON MOSFET GENERAL-PURPOSE SWITCHING DEVICE APPLICATIONS
The UT3N01Z uses UTC advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device’s general purpose is for switching device applications.
* RDS(ON) = 3.7 Ω @VGS = 4 V
* Ultra low gate charge ( typical 1.58 nC )
* Low reverse transfer capacitance ( CRSS = typical 2.3 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness