N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DESCRIPTION
The UT3406 uses advanced trench technology to provide excellent RDS(ON), low gate charge and can be operated at low gate voltages. This device is perfect fit for use as a load switch or in PWM applications.
FEATURES
* VDS (V) = 30V
* I D = 3.6A (VGS = 10V)
* RDS(ON) < 65m Ω (VGS = 10V)
* RDS(ON) < 105mΩ (VGS = 4.5V)
* Halogen Free |
