20V N-CHANNEL ENHANCEMENT MODE MOSFET
DESCRIPTION
The UT2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable fo r use as a load switch or in PWM applications.
FEATURES
* RDS(ON) = 33 mΩ @VGS = 4.5 V
* RDS(ON) = 40 mΩ @VGS = 2.5 V
* Advanced trench process technology
* Excellent thermal and electrical capabilities
* High density cell design for ultra low on-resistance |
