N-CHANNEL ENHANCEMENT MODE POWER MOSFET
DESCRIPTION
The UP9T15GL uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
FEATURES
* VDS(V)=20V
* I D=12 .5A (V GS=4.5V)
* RDS(ON)<50mΩ@ VGS =4.5 V, ID =6 A
* RDS(ON)<80mΩ@ VGS =2.5 V, ID =5.2 A |
