P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DESCRIPTION
The UP2003 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
FEATURES
* VDS(V)=-25V
* I D=-9 A
* RDS(ON)<35 m Ω@ VGS =-4.5 V, I D =-7 A
* RDS(ON)<20 m Ω@ VGS =-10 V, ID =-9 A |