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BSS138 Datasheet

N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE  
 

 
 
DESCRIPTION
 
 
This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance.
Optimized for switching applications, this device improves the overall efficiency of DC/DC onverters and allows operation to higher switching frequencies.
 
 
 
FEATURES
 
* RDS(ON)=0.7 Ω @ VGS=10V
* RDS(ON)=1Ω @ VGS=4.5V
* Low Capacitance
* Low Gate Charge
* Fast Switching Capability
* Avalanche Energy Specified
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