N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE
This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance.
Optimized for switching applications, this device improves the overall efficiency of DC/DC onverters and allows operation to higher switching frequencies.
* RDS(ON)=0.7 Ω @ VGS=10V
* RDS(ON)=1Ω @ VGS=4.5V
* Low Capacitance
* Low Gate Charge
* Fast Switching Capability
* Avalanche Energy Specified