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2N7000Z Datasheet

115m Amps, 60 Volts   N-CHANNEL ENHANCEMENT   MODE MOSFET  
 

 
 
DESCRIPTION
 
 
     The UTC 2N7000Z has been designed to minimize on-state
resistance to provide rugged, reliable, and fast switching
performance. It can be used in most applications requiring up to
400mA DC and can deliver pulsed currents up to 2A. The product is
particularly suited for low voltage, low current applications, such as
small servo motor control, power MOSFET gate drivers and other
switching applications
 
 
 
FEATURES
 
*High density cell design for low RDS(ON)
*Voltage controlled small signal switch
*Rugged and reliable                       
*High saturation current capability
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