10A, 150V, 0.3Ω, N-CHANNEL POWER MOSFETS
DESCRIPTION
The UTC 10N15 is an N-channel enhancement mode silicon-gate
power field effect transistors, it uses UTC’s advanced technology to
provide the customers with high breakdown voltage etc.
The UTC 10N15 is suitable for switching converters, switching
regulators, relay drivers and motor drivers, etc.
FEATURES
* RDS(ON)<0.300Ω @VGS=10V, ID=10A
* High breakdown voltage |
