N-CHANNEL ENHANCEMENT MODE
DESCRIPTION
The UTD452 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
FEATURES
* RDS(ON)< 8.5mΩ @VGS=10V
* RDS(ON)< 14m Ω @VGS=4.5V
* Low capacitance
* Low gate charge
* Fast switching capability
* Avalanche energy specified * Avalanche energy specified |
