SWITCHING N-CHANNEL POWER MOSFET
DESCRIPTION
This UK3919 N-Channel Logic Level MOSFET is
produced using UTC Semiconductor advanced Power Trench process which has been tailored to make the on-state resistance minimum and yet maintain low gate charge for superior switching performance especially.
The UK3919 is well suited for where low in-line power
loss is needed in a very small outline surface mount
package, such as low voltage and battery powered
applications.
FEATURES
* RDS(ON) = 5.6m Ω @VGS = 10 V
* Low capacitance
* Optimized gate charge
* Fast switching capability
* Avalanche energy specified |
