DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL)
DESCRIPTION
The UD606 can provide excellent RDS(ON) and low gate charge by using advanced trench technology MOSFETs. The UD606 may be used in H-bridge, inve rters and other applications.
FEATURES
* N-Channel: 40V/8A
RDS(ON) = 33mΩ @ VGS =10V
RDS(ON) = 47mΩ @ VGS= 4.5V
* P-Channel: -40V/-8A
RDS(ON) = 50mΩ @ VGS= -10V
RDS(ON) = 70m Ω @ VGS= -4.5V
* Super high dense cell design
* Reliable and rugged |
