100A, 30V N-CHANNEL POWER MOSFET
DESCRIPTION
The UT100N03 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
FEATURES
* RDS(ON)= 5.3mΩ@VGS=10 V
* RDS(ON) = 8.0mΩ@VGS=4.5 V |
