4.5A, 500V, 1.5Ω, N-CHANNEL POWER MOSFET
DESCRIPTION
The N-Channel enhancement mode silicon gate power MOSFET is
designed for high voltage, high speed power switching applications, such as
switching regulators, switching converters, solenoid, motor drivers and
related drivers.
FEATURES
* VDS = 500V
* ID = 4.5A
* RDS(ON)=1.5Ω
* Single Pulse Avalanche Energy Rated
* Rugged- SOA is Power Dissipation Limited
* Fast Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* ESD Protected |
