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UF830Z Datasheet
4.5A, 500V, 1.5Ω, N-CHANNEL  POWER MOSFET
 
 
 
DESCRIPTION
 
   The N-Channel enhancement mode silicon gate power MOSFET is
designed for high voltage, high speed power switching applications, such as
switching regulators, switching converters, solenoid, motor drivers and
related drivers.
 
 
FEATURES
 
* VDS = 500V
* ID = 4.5A
* RDS(ON)=1.5Ω
* Single Pulse Avalanche Energy Rated
* Rugged- SOA is Power Dissipation Limited
* Fast Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* ESD Protected
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