5.5 Amps, 400 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor
drivers, relay drivers.
FEATURES
* RDS(ON) = 1Ω@VGS = 10 V
* Avalanche Energy Specified
* Rugged - SOA is Power Dissipation Limited
* Fast Switching Capability
* Linear Transfer Characteristics
* High Input Impedance |