18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET
DESCRIPTION
These kinds of n-channel power mos field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications.
The UF640 suitable for resonant and PWM converter topologies.
FEATURES
* RDS(ON) =0.18Ω@VGS = 10V.
* Ultra Low gate charge (typical 43nC)
* Low reverse transfer capacitance (CRSS = typical 100 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness |
