200V, 9A N-CHANNEL POWER MOSFET
DESCRIPTION
The N-Channel enhancement mode silicon gate power
MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
FEATURES
* RDS(ON) = 0.4Ω@ VGS = 10 V
* Ultra Low Gate Charge ( typical 19 nC )
* Low Reverse Transfer Capacitance ( CRSS = typical 80 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability |
