2A, 650V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N65 is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching time,
low gate charge, low on-state resistance and have a high rugged
avalanche characteristics. This power MOSFET is usually used at
high speed switching applications in power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) = 5.5Ω @ VGS = 10V
* Ultra Low gate charge (typical 9.0nC)
* Low reverse transfer capacitance (CRSS = typical 5.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness |
